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BC635 データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BC635 データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente BC635 / BC637 / BC639 NPN General Purpose Transistor 25-Dec-2014 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E K F D B G H J RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low frequency amplifier High current transistors CLASSIFICATION OF hFE Product-Rank BC635 BC637-16 BC639-16 Range 40~250 63~250 63~250 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit BC635 45 BC637 60 Collector to Base Voltage BC639 VCBO 100 V BC635 45 BC637 60 Collector to Emitter Voltage BC639 VCEO 80 V Emitter to Base Voltage VEBO 5 V Continuous Collector Current IC 1 A Collector Power Dissipation PC 830 mW Junction, Storage Temperature TJ, TSTG 150, -65~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions BC635 45 - - BC637 60 - - Collector to Emitter Breakdown Voltage BC639 V(BR)CEO 80 - - V IC=10mA, IB=0 Collector Cut - Off Current ICBO - - 0.1 μA VCB=30V, IE=0 Emitter cut-off current ICEO - - 0.1 μA VEB=5V, IB=0 25 - - VCE=2V, IC=5mA DC Current Gain 25 - - VCE=2V, IC=500mA BC635 40 - 250 BC637-16 63 - 250 DC Current Gain BC639-16 hFE 63 - 250 VCE=2V, IC=150mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.5 V IC=500mA, IB=50mA Base-emitter voltage VBE - - 1 V VCE=2V, IC=500mA Transition frequency fT - 100 - MHz VCE=5V, IC=10mA, f=50MHz TO-92 Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Emitter Collector Base |
同様の部品番号 - BC635_15 |
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同様の説明 - BC635_15 |
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