IRF830S datasheet(4/8 Pages) KERSEMI

部品番号	IRF830S

部品情報	Available in Tape and Reel

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メーカー	KERSEMI [Kersemi Electronic Co., Ltd.]

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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

1500

1250

1000

750

0

250

500

100

101

VDS, Drain-to-Source Voltage (V)

C

iss

C

rss

C

oss

V

GS = 0 V, f = 1 MHz

C

iss = Cgs + Cgd, Cds Shorted

C

rss = Cgd

C

oss = Cds + Cgd

91064_05

91064_06

QG, Total Gate Charge (nC)

20

16

12

8

0

4

0

8

40

32

24

16

I

D = 3.1 A

V

DS = 100 V

V

DS = 250 V

For test circuit

see figure 13

V

DS = 400 V

101

100

VSD, Source-to-Drain Voltage (V)

0.4

1.2

1.0

0.8

0.6

25

°C

150

°C

V

GS = 0 V

91064_07

10 µs

100 µs

1 ms

10 ms

Operation in this area limited

by R

DS(on)

VDS, Drain-to-Source Voltage (V)

T

C = 25 °C

T

J = 150 °C

Single Pulse

10-2

102

0.1

2

5

0.1

2

5

1

2

5

10

2

5

25

1

25

10

25

102

25

103

25

104

91064_08

IRF830S, SiHF830S

2014-8-28

4

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