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IRF830S データシート(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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IRF830S データシート(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 8 page IRF830S, SiHF830S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated •Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12). c. ISD 4.5 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 500 RDS(on) ()VGS = 10 V 1.5 Qg (Max.) (nC) 38 Qgs (nC) 5.0 Qgd (nC) 22 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF830S-GE3 SiHF830STRL-GE3a Lead (Pb)-free IRF830SPbF IRF830STRLPbFa SiHF830S-E3 SiHF830STL-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 4.5 A TC = 100 °C 2.9 Pulsed Drain Currenta IDM 18 Linear Derating Factor 0.59 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 280 mJ Avalanche Currenta IAR 4.5 A Repetitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation TC = 25 °C PD 74 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.1 Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 2014-8-28 1 www.kersemi.com |
同様の部品番号 - IRF830S |
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同様の説明 - IRF830S |
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