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IRF830S データシート(PDF) 1 Page - Kersemi Electronic Co., Ltd.

部品番号 IRF830S
部品情報  Available in Tape and Reel
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メーカー  KERSEMI [Kersemi Electronic Co., Ltd.]
ホームページ  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF830S データシート(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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IRF830S, SiHF830S
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12).
c. ISD  4.5 A, dI/dt  75 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
500
RDS(on) ()VGS = 10 V
1.5
Qg (Max.) (nC)
38
Qgs (nC)
5.0
Qgd (nC)
22
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF830S-GE3
SiHF830STRL-GE3a
Lead (Pb)-free
IRF830SPbF
IRF830STRLPbFa
SiHF830S-E3
SiHF830STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
4.5
A
TC = 100 °C
2.9
Pulsed Drain Currenta
IDM
18
Linear Derating Factor
0.59
W/°C
Linear Derating Factor (PCB Mount)e
0.025
Single Pulse Avalanche Energyb
EAS
280
mJ
Avalanche Currenta
IAR
4.5
A
Repetitive Avalanche Energya
EAR
7.4
mJ
Maximum Power Dissipation
TC = 25 °C
PD
74
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
3.1
Peak Diode Recovery dV/dtc
dV/dt
3.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
2014-8-28
1
www.kersemi.com


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