IRFBE30 datasheet(1/7 Pages) KERSEMI

部品番号	IRFBE30

部品情報	Dynamic dV/dt Rating Repetitive Avalanche Rated

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メーカー	KERSEMI [Kersemi Electronic Co., Ltd.]

ホームページ	http://www.kersemi.com

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Power MOSFET

IRFBE30

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, RG = 25 Ω, IAS = 4.1 A (see fig. 12).

c. ISD ≤ 4.1 A, dI/dt ≤ 100 A/µs, VDD ≤ 600, TJ ≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

VDS (V)

800

RDS(on) (Ω)VGS = 10 V

3.0

Qg (Max.) (nC)

78

Qgs (nC)

9.6

Qgd (nC)

45

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220

G

D

S

ORDERING INFORMATION

Package

TO-220

Lead (Pb)-free

IRFBE30PbF

SiHFBE30-E3

SnPb

IRFBE30

SiHFBE30

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

800

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

4.1

A

TC = 100 °C

2.6

Pulsed Drain Currenta

IDM

16

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energyb

EAS

260

mJ

Repetitive Avalanche Currenta

IAR

4.1

A

Repetitive Avalanche Energya

EAR

13

mJ

Maximum Power Dissipation

TC = 25 °C

PD

125

W

Peak Diode Recovery dV/dtc

dV/dt

2.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

www.kersemi.com

2014-8-13

1

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