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PZT4672 データシート(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT4672 データシート(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual PZT4672 NPN Transistor Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente The PZT4672 is designed for low frequency amplifier applications. 4 6 7 2 Features *Excellent DC Current Gain Characteristic *Low Saturation Voltage, Typically VCE(sat)=0.1V at IC/IB=1A/50mA Description Date Code B C E ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO - - V IC= 50 VEB=5V,IC=0 µA,IE=0 IC= 1mA,IB=0 IE= 50µA,IC=0 VCB= 60V,IE=0 IC= VCE= V, IC= VCE= V, IC= 500mA,f=100MHz VCB=10 , f=1MHz,IE=0 *BVCEO 50 - - V BVEBO - - V ICBO - - 100 nA - VCE(sat) - hFE * fT - MH Cob - pF z Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance t 60 6 0.1 0.35 100 V 1A,IB=50mA 2 500mA 2 V C 120 - 210 400 25 *Pulse width 380 s, Duty Cycle 2% ≦ ≦ µ * - - o IEBO Emitter-Base Cutoff Current - nA MAXIMUM RATINGS Symbol Parameter Value Collector Current (DC) 6 2 55~+150 50 60 2 5 IC Tstg TJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage V A W Storage Temperature - C O VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage V Units ABSOLUTE Ta=25C o Collector Current (Pulse PW=10ms) Classification of hFE Rank A B 120~240 200~400 Range 5 1.40 1.80 Mi llimeter Mi llimeter SOT-223 01-Jun-2002 Rev. A Page 1 of 2 REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13 C TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 C 10 C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 |
同様の部品番号 - PZT4672_15 |
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同様の説明 - PZT4672_15 |
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