データシートサーチシステム |
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IRF3515L データシート(PDF) 1 Page - International Rectifier |
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IRF3515L データシート(HTML) 1 Page - International Rectifier |
1 / 10 page Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 41 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A IDM Pulsed Drain Current 164 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 4.3 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C 10/28/99 SMPS MOSFET HEXFET® Power MOSFET l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) VDSS RDS(on) max ID 150V 0.045 Ω 41A Applicable Off Line SMPS Topologies l Telcom 48V input DC/DC Active Clamp Reset Forward Converter www.irf.com 1 Notes through
are on page 10 Absolute Maximum Ratings IRF3515S IRF3515L D2Pak IRF3515S TO-262 IRF3515L PD- 91899B |
同様の部品番号 - IRF3515L |
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同様の説明 - IRF3515L |
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