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IRF5NJ3315 データシート(PDF) 2 Page - International Rectifier

部品番号 IRF5NJ3315
部品情報  POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A)
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF5NJ3315 データシート(HTML) 2 Page - International Rectifier

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
150
V
VGS = 0V, ID = 250µA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.18
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.08
VGS = 10V, ID = 12A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
12
S ( )VDS = 15V, IDS = 12A ➃
IDSS
Zero Gate Voltage Drain Current
25
VDS = 150V ,VGS=0V
250
VDS = 120V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
95
VGS =10V, ID = 12A
Qgs
Gate-to-Source Charge
11
nC
VDS = 120V
Qgd
Gate-to-Drain (‘Miller’) Charge
47
td(on)
Turn-On Delay Time
25
VDD = 75V, ID = 12A,
tr
Rise Time
60
VGS =10V, RG = 5.1Ω
td(off)
Turn-Off Delay Time
75
tf
Fall Time
60
LS + LD
Total Inductance
4.0
Measured from the center of
drain pad to center of source pad
Ciss
Input Capacitance
1370
VGS = 0V, VDS = 25V
Coss
Output Capacitance
300
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
160
nA
nH
ns
µA
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
1.67
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
20
ISM
Pulse Source Current (Body Diode) ➀
——
80
VSD
Diode Forward Voltage
1.3
V
Tj = 25°C, IS = 12A, VGS = 0V ➃
trr
Reverse Recovery Time
260
ns
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
1.7
µCVDD ≤ 25V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A


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