データシートサーチシステム |
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7413 データシート(PDF) 1 Page - International Rectifier |
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7413 データシート(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 3/19/02 IRF7413 SMPS MOSFET HEXFET® Power MOSFET l High frequency DC-DC converters Benefits Applications l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.6 A IDM Pulsed Drain Current 96 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 1.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 8 SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A VDSS RDS(on) max(mW) ID 30V 11@VGS = 10V 12A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance PD- 91330F |
同様の部品番号 - 7413 |
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同様の説明 - 7413 |
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