IRF7509

PD - 91270J

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Generation V Technology

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Ultra Low On-Resistance

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Dual N and P Channel MOSFET

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Very Small SOIC Package

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Low Profile (<1.1mm)

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Available in Tape & Reel

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Fast Switching

N-Ch

P-Ch

30V

-30V

12/1/98

Micro 8

Fifth

Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The new Micro8 package, with half the footprint area of the standard SO-8,

provides the smallest footprint available in an SOIC outline. This makes the

Micro8 an ideal device for applications where printed circuit board space is at

a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into

extremely thin application environments such as portable electronics and

PCMCIA cards.

Description

D1

D1

D2

D2

G1

S2

G2

S1

T op V ie w

8

1

2

3

4

5

6

7

N-CHANNE L M O SFET

P-CHANNE L M O SFET

www.irf.com

1

Parameter

Max.

Units

N-Channel

P-Channel

Drain-Source Voltage

30

-30

V

2.7

-2.0

2.1

-1.6

A

Pulsed Drain Current



21

-16

Maximum Power Dissipation

„

1.25

W

Maximum Power Dissipation

„

0.8

W

Linear Derating Factor

10

mW/°C

Gate-to-Source Voltage

± 20

V

Gate-to-Source Voltage Single Pulse tp<10µS

30

V

dv/dt

Peak Diode Recovery dv/dt

‚

5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Soldering Temperature, for 10 seconds

240 (1.6mm from case)

Thermal Resistance

Parameter

Max.

Units

Maximum Junction-to-Ambient

„

100

°C/W

Absolute Maximum Ratings