IRF9Z34N datasheet(8/10 Pages) KERSEMI

部品番号	IRF9Z34N

部品情報	Advanced Planar Technology

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メーカー	KERSEMI [Kersemi Electronic Co., Ltd.]

ホームページ	http://www.kersemi.com

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Peak Diode Recovery dv/dt Test Circuit

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

*

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[

] ***

Fig 14. For P-Channel HEXFETS

AUIRF9Z34N

2014-8-11

8

www.kersemi.com

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