IRFB11N50A datasheet(4/8 Pages) IRF

部品番号	IRFB11N50A

部品情報	Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

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メーカー	IRF [International Rectifier]

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

10

20

30

40

50

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

6.6A

V

= 100V

DS

V

= 250V

DS

V

= 400V

DS

0.1

1

10

100

0.0

0.4

0.8

1.2

1.6

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0

400

800

1200

1600

2000

2400

1

1 0

100

1000

DS

V

, D rain-to -S ou rce V o lta ge (V )

A

V

= 0 V ,

f = 1 M H z

C

= C

+ C

, C

S H O R T E D

C

= C

C

= C

+ C

GS

is s

g s

g d

d s

rss

g d

o s s

d s

g d

C is s

C os s

C rs s

11A

0.1

1

10

100

1000

10

100

1000

10000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

C

V

, Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

同様の部品番号 - IRFB11N50A

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	IRFB11N50A	159Kb / 8P	Power MOSFET Rev. B, 21-Jul-08
Vishay Siliconix	IRFB11N50A	178Kb / 8P	Power MOSFET 01-Jan-2022
Inchange Semiconductor ...	IRFB11N50A	371Kb / 2P	isc N-Channel MOSFET Transistor
Vishay Siliconix	IRFB11N50APBF	159Kb / 8P	Power MOSFET Rev. B, 21-Jul-08
Vishay Siliconix	IRFB11N50APBF	178Kb / 8P	Power MOSFET 01-Jan-2022

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同様の説明 - IRFB11N50A

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