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IRFB59N10D データシート(PDF) 2 Page - International Rectifier |
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IRFB59N10D データシート(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFB/IRFS/IRFSL59N10D 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 18 ––– ––– S VDS = 50V, ID = 35.4A Qg Total Gate Charge ––– 76 114 ID = 35.4A Qgs Gate-to-Source Charge ––– 24 36 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– 36 54 VGS = 10V, td(on) Turn-On Delay Time ––– 16 ––– VDD = 50V tr Rise Time ––– 90 ––– ID = 35.4A td(off) Turn-Off Delay Time ––– 20 ––– RG = 2.5Ω tf Fall Time ––– 12 ––– VGS = 10V Ciss Input Capacitance ––– 2450 ––– VGS = 0V Coss Output Capacitance ––– 740 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 190 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 3370 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 390 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 690 ––– VGS = 0V, VDS = 0V to 80V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 510 mJ IAR Avalanche Current ––– 35.4 A EAR Repetitive Avalanche Energy ––– 20 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 35.4A, VGS = 0V trr Reverse Recovery Time ––– 130 200 ns TJ = 25°C, IF = 35.4A Qrr Reverse RecoveryCharge ––– 0.75 1.1 µC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 59 236 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.025 Ω VGS = 10V, ID = 35.4A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V IGSS IDSS Drain-to-Source Leakage Current Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient ––– 40 |
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