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IRFBA1404P データシート(PDF) 1 Page - International Rectifier

部品番号. IRFBA1404P
部品情報  Power MOSFET(Vdss=40V, Rds(on)=3.7mohm, Id=206A)
ダウンロード  9 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRFBA1404P Datasheet(HTML) 1 Page - International Rectifier

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IRFBA1404P
HEXFET® Power MOSFET
PD - 93806
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175oC junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220 TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Description
S
D
G
10/24/00
www.irf.com
1
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
206
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
145
†
A
IDM
Pulsed Drain Current

650
PD @TC = 25°C
Power Dissipation
300
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
See Fig.12a, 12b, 15, 16
mJ
IAR
Avalanche Current

A
EAR
Repetitive Avalanche Energy

30
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-40 to + 175
TSTG
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Recommended clip force
20
N
°C
l
Anti-lock Braking Systems (ABS)
l
Electric Power Steering (EPS)
l
Electric Braking
l
Radiator Fan Control
VDSS = 40V
RDS(on) = 3.7mΩ
ID = 206A
†
Super-220™
Typical Applications
Benefits
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Increase Current Handling Capability
l
175°C Operating Temperature
l
Fast Switching
l
Dynamic dv/dt Rating
l
Repetitive Avalanche Allowed up to Tjmax
AUTOMOTIVE MOSFET


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