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IRFBC40L データシート(PDF) 1 Page - International Rectifier |
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IRFBC40L データシート(HTML) 1 Page - International Rectifier |
1 / 10 page IRFBC40S/L HEXFET® Power MOSFET PD - 91016A Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.0 RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 6.2 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.9 A IDM Pulsed Drain Current
25 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 130 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
570 mJ IAR Avalanche Current 6.2 A EAR Repetitive Avalanche Energy 13 mJ dv/dt Peak Diode Recovery dv/dt
3.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings VDSS = 600V RDS(on) = 1.2Ω ID = 6.2A 2 D P a k T O - 262 S D G 9/27/01 l Surface Mount (IRFBC40S) l Low-profile through-hole (IRFBC40L) l Available in Tape & Reel (IRFBC40S) l Dynamic dv/dt Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC40L) is available for low-profile applications. Description |
同様の部品番号 - IRFBC40L |
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同様の説明 - IRFBC40L |
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