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IRFBC40L データシート(PDF) 1 Page - International Rectifier

部品番号 IRFBC40L
部品情報  Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRFBC40L データシート(HTML) 1 Page - International Rectifier

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IRFBC40S/L
HEXFET® Power MOSFET
PD - 91016A
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.0
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
Thermal Resistance
°C/W
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
…
6.2
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
…
3.9
A
IDM
Pulsed Drain Current
…
25
PD @TA = 25°C
Power Dissipation
3.1
W
PD @TC = 25°C
Power Dissipation
130
W
Linear Derating Factor
1.0
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚…
570
mJ
IAR
Avalanche Current

6.2
A
EAR
Repetitive Avalanche Energy

13
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ…
3.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
VDSS = 600V
RDS(on) = 1.2Ω
ID = 6.2A
2
D
P a k
T O - 262
S
D
G
9/27/01
l Surface Mount (IRFBC40S)
l Low-profile through-hole (IRFBC40L)
l Available in Tape & Reel (IRFBC40S)
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Third generation HEXFETs from international Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes
up to HEX-4. It provides the highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application. The through-hole version
(IRFBC40L) is available for low-profile applications.
Description


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