データシートサーチシステム |
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2SJ517 データシート(PDF) 4 Page - Renesas Technology Corp |
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2SJ517 データシート(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page 2SJ517 Rev.4.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS –20 V Gate to source voltage VGSS ±10 V Drain current ID –2 A Drain peak current ID (pulse) Note 1 –4 A Body to drain diode reverse drain current IDR –2 A Channel dissipation Pch Note 2 1 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10% 2. When using the aluminium ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –20 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±10 — — V IG = ±100 µA, VDS = 0 Zero gate voltage drain current IDSS — — –10 µA VDS = –20 V, VGS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±8 V, VDS = 0 Gate to source cutoff voltage VGS (off) –0.5 — –1.5 V ID = –1 mA, VDS = –10 V RDS (on) — 0.18 0.24 Ω ID = –1 A, VGS = –4 V Note 3 Static drain to source on state resistance RDS (on) — 0.27 0.43 Ω ID = –1 A, VGS = –2.5 V Note 3 Forward transfer admittance |yfs| 1.8 3.0 — S ID = –1 A, VDS = –10 V Note 3 Input capacitance Ciss — 320 — pF Output capacitance Coss — 190 — pF Reverse transfer capacitance Crss — 90 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time td (on) — 14 — ns Rise time tr — 75 — ns Turn-off delay time td (off) — 90 — ns Fall time tf — 90 — ns VGS = –4 V ID = –1 A RL = 10 Ω Body to drain diode forward voltage VDF — –0.95 — V IF = –2 A, VGS = 0 Body to drain diode reverse recovery time trr — 70 — ns IF = –2 A, VGS = 0 diF/dt = 50 A/ µs Note: 3. Pulse test |
同様の部品番号 - 2SJ517_15 |
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同様の説明 - 2SJ517_15 |
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