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IRL3103L データシート(PDF) 2 Page - International Rectifier

部品番号 IRL3103L
部品情報  Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRL3103L データシート(HTML) 2 Page - International Rectifier

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IRL3103S/IRL3103L
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 34A, VGS = 0V
„
trr
Reverse Recovery Time
–––
57
86
ns
TJ = 25°C, IF = 34A
Qrr
Reverse Recovery Charge
–––
110
170
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
64
220
A
‚ Starting TJ = 25°C, L = 220µH
RG = 25Ω, IAS = 34A, VGS=10V (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ƒ ISD ≤ 34A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.028 –––
V/°C
Reference to 25°C, ID = 1mA
–––
–––
12
VGS = 10V, ID = 34A
„
–––
–––
16
VGS = 4.5V, ID = 28A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
–––
VVDS = VGS, ID = 250µA
gfs
Forward Transconductance
22
–––
–––
SVDS = 25V, ID = 34A
„
–––
–––
25
µA
VDS = 30V, VGS = 0V
–––
–––
250
VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -16V
Qg
Total Gate Charge
–––
–––
33
ID = 34A
Qgs
Gate-to-Source Charge
–––
–––
5.9
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
17
VGS = 4.5V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
8.9
–––
VDD = 15V
tr
Rise Time
–––
120
–––
ID = 34A
td(off)
Turn-Off Delay Time
–––
14
–––
RG = 1.8Ω
tf
Fall Time
–––
9.1
–––
VGS = 4.5V, See Fig. 10
„
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
1650 –––
VGS = 0V
Coss
Output Capacitance
–––
650
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
110
–––
pF
ƒ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
‚
––– 1320
…130† mJ
IAS = 34A, L = 0.22mH
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
nH
LS
Internal Source Inductance
–––
7.5
–––
LD
Internal Drain Inductance
–––
4.5
–––
IDSS
Drain-to-Source Leakage Current
m


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