IRL630 datasheet(3/8 Pages) IRF

部品番号	IRL630

部品情報	Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)

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メーカー	IRF [International Rectifier]

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Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

IRL630

Fig 1. Typical Output Characteristics,

TC = 25oC

Fig 2. Typical Output Characteristics,

TC = 150oC

0.1

1

1 0

1 0 0

0.1

1

1 0

10 0

V

, Drain-to-Source Voltage (V)

DS

VGS

TOP

7.50V

5.00V

4.00V

3.50V

3.00V

2.75V

2.50V

BOTTOM 2.25V

2.25V

20µs PULSE WIDTH

T = 25°C

c

A

0.01

0.1

1

10

100

2.0

2.5

3.0

3.5

4.0

4.5

5.0

T = 25°C

T = 150°C

J

GS

V

, Gate-to-Source Voltage (V)

V

= 50V

20µs PULSE WIDTH

DS

A

0.0

0.5

1.0

1.5

2.0

2.5

-60 -40 -20

0

20

40

60

80

100 120 140 160

J

T , Junction Temperature (°C)

V

= 5.0V

GS

I

= 9.0A

D

A

To Order

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同様の部品番号 - IRL630

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	IRL630	1Mb / 8P	Power MOSFET S-Pending-Rev. A, 17-Jul-08
ARTSCHIP ELECTRONICS CO...	IRL630	494Kb / 7P	HEXFET Power Mosfet
Vishay Siliconix	IRL630	1Mb / 9P	Power MOSFET 01-Jan-2022
Vishay Siliconix	IRL630	895Kb / 9P	Power MOSFET 01-Jan-2022
Fairchild Semiconductor	IRL630A	224Kb / 7P	Advanced Power MOSFET

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同様の説明 - IRL630

メーカー	部品番号	データシート	部品情報
International Rectifier	IRF630	176Kb / 6P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRC	229Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRL630S	352Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRFI630G	176Kb / 6P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
	IRLI630G	337Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
	IRHN7230	513Kb / 14P	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A)
	IRF630PBF	2Mb / 8P	HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )
	IRF630SPBF	986Kb / 8P	HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )
	IRFPC60	162Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A)
	IRFP450LC	340Kb / 8P	Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)