データシートサーチシステム |
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2SK1161 データシート(PDF) 6 Page - Renesas Technology Corp |
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2SK1161 データシート(HTML) 6 Page - Renesas Technology Corp |
6 / 9 page 2SK1161, 2SK1162 Rev.2.00 Sep 07, 2005 page 4 of 6 2.0 40 160 Case Temperature TC (°C) 1.6 0.4 0 80 120 0 0.8 1.2 Static Drain to Source on State Resistance vs. Temperature VGS = 10 V Pulse Test 2, 5 A ID = 10 A –40 50 0.5 10 Drain Current ID (A) 20 2 1.0 5 0.5 5 10 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 0.1 1.0 2 –25 °C TC = 25°C 75 °C 0.2 5,000 1.0 20 Reverse Drain Current IDR (A) 2,000 200 0.5 2 10 50 500 1,000 Body to Drain Diode Reverse Recovery Time 0.2 100 5 di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 5,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 5 1,000 Typical Capacitance vs. Drain to Source Voltage 0 Crss Ciss Coss VGS = 0 f = 1 MHz 10 500 16 40 Gate Charge Qg (nc) Dynamic Input Characteristics 400 100 824 32 0 200 300 VDS 100 V 20 16 4 0 8 12 VDD = 100 V 250 V 400 V ID = 7 A 250 V VDD = 400 V VGS 1.0 20 Drain Current ID (A) 500 50 0.5 2 10 10 100 200 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% 0.2 20 5 Switching Characteristics td (off) tr td (on) tf 5 • • |
同様の部品番号 - 2SK1161_15 |
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同様の説明 - 2SK1161_15 |
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