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ST3230C データシート(PDF) 2 Page - International Rectifier |
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ST3230C データシート(HTML) 2 Page - International Rectifier |
2 / 6 page ST3230C..R Series 2222222222222 12 D-426 Voltage V DRM /V RRM , max. repetitive V RSM , maximum non- I DRM /I RRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T C = 125°C V V mA 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 ELECTRICAL SPECIFICATIONS Voltage Ratings I T(AV) Max. average on-state current 2785 (1720) A @ Case temperature 80 °C I T(AV) Max. average on-state current 3360 (1360) A @ Heatsink temperature 55 (85) °C I T(RMS) Max. RMS on-state current 5970 A DC @ 25°C heatsink temperature double side cooled I TSM Max. peak, one-cycle No voltage non-repetitive surge current reapplied 50% V RRM reapplied Sinusoidal half wave, I2t Maximum I2t for fusing No voltage Initial T C = 125°C reapplied 50% V RRM reapplied V T(TO) Max. value of threshold voltage 0.92 V T J = T J max. r t Max. value of on-state slope resistance V TM Max. on-state voltage 1.3 V I pk = 2900A, T C = 25°C I L Typical latching current 300 mA T J = 25°C, V D = 5V Parameter ST3230C..R Units Conditions On-state Conduction A KA 2s 0.09 T J = T J max. m Ω 180° conduction, half sine wave double side (single side [anode side]) cooled Parameter ST3230C..R Units Conditions di/dt Max. repetitive 50Hz (no repetitive) From 67% V DRM to 1000A gate drive 10V, 5 Ω, t r = 0.5µs rate of rise of turned-on current to 1A, T J = T J max. Gate drive 30V, 15 Ω, V d = 67% V DRM , T J = 25°C Rise time 0.5µs I T = 1000A, t p = 1ms, T J = T J max, V RM = 50V, dI RR /dt = 2A/µs, V DR = 67% V DRM , dv DR /dt = 8V/µs linear 150 (300) A/µs µs t q Typical turn-off time 500 t d Maximum delay time 4.5 t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms 61200 64000 49000 51300 18730 17000 12000 10920 ST3230C..R 250 Switching Next Data Sheet Index Previous Datasheet To Order |
同様の部品番号 - ST3230C |
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同様の説明 - ST3230C |
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