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2SJ603 データシート(PDF) 8 Page - Renesas Technology Corp

部品番号 2SJ603
部品情報  MOS FIELD EFFECT TRANSISTOR
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ603 データシート(HTML) 8 Page - Renesas Technology Corp

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Data Sheet D14648EJ3V0DS
6
2SJ603
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
1
10
100
1 m10 m
VDD = –30 V
RG = 25
Ω
VGS = –20
→ 0 V
IAS = –25 A
10
µ
100
µ
0.1
E
AS = 62.5
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
VDD = –30 V
RG = 25
Ω
VGS = –20
→ 0 V
IAS
≤ –25 A


同様の部品番号 - 2SJ603_15

メーカー部品番号データシート部品情報
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NEC		 2SJ603-S NEC-2SJ603-S Datasheet
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Renesas Technology Corp		 2SJ603-S RENESAS-2SJ603-S Datasheet
215Kb / 10P		    MOS FIELD EFFECT TRANSISTOR
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logo
NEC		 2SJ603-Z NEC-2SJ603-Z Datasheet
79Kb / 8P		    MOS FIELD EFFECT TRANSISTOR
logo
Renesas Technology Corp		 2SJ603-Z RENESAS-2SJ603-Z Datasheet
215Kb / 10P		    MOS FIELD EFFECT TRANSISTOR
2001
logo
NEC		 2SJ603-ZJ NEC-2SJ603-ZJ Datasheet
79Kb / 8P		    MOS FIELD EFFECT TRANSISTOR
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同様の説明 - 2SJ603_15

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