KTD1824E datasheet(1/3 Pages) KEC

部品番号	KTD1824E

部品情報	EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)

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メーカー	KEC [KEC(Korea Electronics)]

ホームページ	http://www.keccorp.com

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2001. 10. 23

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SEMICONDUCTOR

TECHNICAL DATA

KTD1824E

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 0

FOR LOW-FREQUENCY AMPLIFICATION.

FEATURES

High foward current transfer ratio hFE.

Low collector to emitter saturation voltage VCE(sat).

High emitter to base voltage VEBO.

Low noise voltage NV.

ESM type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

MAXIMUM RATINGS (Ta=25 )

DIM

MILLIMETERS

A

B

D

E

ESM

1.60 0.10

0.85 0.10

0.70 0.10

0.27+0.10/-0.05

1.60 0.10

1.00 0.10

0.50

0.13 0.05

C

G

H

J

1

3

2

E

B

D

J

1. EMITTER

2. BASE

3. COLLECTOR

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=20V, IE=0

-

100

nA

ICEO

VCE=20V, IB=0

-

1

A

Collector-Base Breakdown Voltage

V(BR)CBO

IC=10 A, IE=0

50

V

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, IB=0

40

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10 A, IC=0

15

V

DC Current Gain

hFE (Note)

VCE=10V, IC=2mA

400

1000

2000

Collector-Emitter Saturation Voltage

VCE(sat)

IC=10mA, IB=1mA

-

0.05

0.2

V

Transition Frequency

fT

VCB=10V, IE=-2mA, f=200MHz

-

120

-

MHz

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

15

V

Collector Current

DC

IC

50

mA

Pulse

ICP

100

Collector Power Dissipation

PC

100

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

h

Rank

Type Name

Marking

L

FE

Note : hFE Classification

A:400~800, B:600~1200, C:1000~2000

同様の部品番号 - KTD1824E

メーカー	部品番号	データシート	部品情報
KEC(Korea Electronics)	KTD1824	72Kb / 3P	EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)
	KTD1824	21Kb / 1P	USM PACKAGE
	KTD1824	21Kb / 1P	USM PACKAGE

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同様の説明 - KTD1824E

メーカー	部品番号	データシート	部品情報
KEC(Korea Electronics)	KTD1824	72Kb / 3P	EPITAXIAL PLANAR NPN TRANSISTOR (FOR LOW-FREQUENCY AMPLIFICATION)
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NEC	2SC5433	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC	2SC5434	61Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC5432	314Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION February 2002
NEC	2SC3663	110Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION