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SI4010DY データシート(PDF) 1 Page - Vishay Siliconix |
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SI4010DY データシート(HTML) 1 Page - Vishay Siliconix |
1 / 11 page Si4010DY www.vishay.com Vishay Siliconix S13-2179-Rev. A, 14-Oct-13 1 Document Number: 62915 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous Rectification • DC/DC Conversion • Telecom/Server • Industrial Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) 30 0.0034 at VGS = 10 V 31.3 22.5 nC 0.0044 at VGS = 4.5 V 27.5 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4010DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS + 20, - 16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 31.3 A TC = 70 °C 24.9 TA = 25 °C 20.2b, c TA = 70 °C 16.1b, c Pulsed Drain Current (t = 300 μs) IDM 100 Continuous Source-Drain Diode Current TC = 25 °C IS 5.4 TA = 25 °C 2.2b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 6 W TC = 70 °C 3.8 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t 10 s RthJA 37 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21 |
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