データシートサーチシステム |
|
SIZ342DT データシート(PDF) 5 Page - Vishay Siliconix |
|
SIZ342DT データシート(HTML) 5 Page - Vishay Siliconix |
5 / 11 page SiZ342DT www.vishay.com Vishay Siliconix S15-0031-Rev. B, 19-Jan-15 5 Document Number: 62949 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CHANNEL-1 AND CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.6 0.85 1.1 1.35 1.6 1.85 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA 0.000 0.006 0.012 0.018 0.024 0.030 2 4 6 8 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D =14.4 A 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 Time (s) 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms 100 μs 10 s, 1 s DC Limited by I DM |
同様の部品番号 - SIZ342DT |
|
同様の説明 - SIZ342DT |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |