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BC847BVN データシート(PDF) 2 Page - Diodes Incorporated |
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BC847BVN データシート(HTML) 2 Page - Diodes Incorporated |
2 / 6 page BC847BVN Document number: DS30627 Rev. 7 - 2 2 of 6 www.diodes.com March 2015 © Diodes Incorporated BC847BVN Maximum Ratings: NPN, BC847B Type (Q1) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 6 V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Peak Emitter Current IEM 200 mA Maximum Ratings: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -6 V Collector Current IC -100 mA Peak Collector Current ICM -200 mA Peak Emitter Current IEM -200 mA Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) Total Device PD 150 mW Thermal Resistance, Junction to Ambient (Note 6) RθJA 833 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Note: 6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. Electrical Characteristics: NPN, BC847B Type (Q1) (@TA = +25°C unless otherwise specified.) Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 — — V IC = 100µA, IB = 0 Collector-Emitter Breakdown Voltage BVCEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6 — — V IE = 100µA, IC = 0 DC Current Gain hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage VCE(sat) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(sat) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage VBE(on) 580 — 660 — 700 720 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA Collector-Cutoff Current ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = +150°C Gain Bandwidth Product fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz Note: 7. Short duration pulse test used to minimize self-heating effect. |
同様の部品番号 - BC847BVN_15 |
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同様の説明 - BC847BVN_15 |
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