SDT02N02 datasheet(3/7 Pages) SAMHOP

部品番号	SDT02N02

部品情報	S uper high dense cell design for low R DS (ON).

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メーカー	SAMHOP [SamHop Microelectronics Corp.]

ホームページ	http://www.samhop.com.tw

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SDT02N02

www.samhop.com.tw

Jun,07,2012

3

Figure 1. Output Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VGS, Gate-to-Source Voltage (V)

ID, Drain Current (A)

Tj( C)

Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Breakdown Voltage Variation

with Temperature

Tj, Junction Temperature ( C)

Drain Current and Temperature

Figure 4. On-Resistance Variation with

and Gate Voltage

Figure 3. On-Resistance vs. Drain Current

Ver 1.0

0

2

4

6

8

10

12

2.8

2.1

1.4

0.7

0

3.5

VGS = 10V

VGS = 6V

2.5

0

2.0

1.5

1.0

0.5

0

1.5

9

7.5

6

4.5

3

25 C

Tj=125 C

-55 C

0.1

6

5

4

3

2

1

0

0.7

1.4

2.1

2.8

3.5

VGS = 10V

0

100

75

25

50

125

150

2.5

2.2

1.9

1.6

1.3

1.0

0.7

V GS =10V

ID=1A

0.4

0.2

1.6

1.4

1.2

1.0

0.8

0.6

125 150

100

75

50

25

0

-25

-50

V DS =V GS

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

75

50

25

0

-25

-50

ID=250uA

VGS = 5V

VGS = 7V

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