BCW33LT1 datasheet(3/6 Pages) LRC

部品番号	BCW33LT1

部品情報	General Purpose Transistors(NPN Silicon)

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メーカー	LRC [Leshan Radio Company]

ホームページ	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

M8–3/6

BCW33LT1

Noise Figure is Defined as:

NF = 20 log

10 ( –––––––––––––––)

1/ 2

e

n = Noise Voltage of the Transistor referred to the input. (Figure 3)

I

n

= Noise Current of the Transistor referred to the input. (Figure 4)

K

= Boltzman’s Constant (1.38 x 10 –23 j/°K)

T

= Temperature of the Source Resistance (°K)

R

s = Source Resistance ( Ω )

e

n

2 + 4KTR

S + I n

2 R

S

2

4KTR

S

TYPICAL NOISE CHARACTERISTICS

(V

CE = 5.0 Vdc, T A = 25°C)

f, FREQUENCY (Hz)

Figure 3. Noise Voltage

f, FREQUENCY (Hz)

Figure 4. Noise Current

I

C , COLLECTOR CURRENT (µA)

Figure 5. Narrow Band, 100 Hz

I

C , COLLECTOR CURRENT (µA)

Figure 7. Wideband

I

C , COLLECTOR CURRENT (µA)

Figure 6. Narrow Band, 1.0 kHz

BANDWIDTH = 1.0 Hz

R

S = 0

I

C= 1.0mA

100

µA

30

µA

300

µA

BANDWIDTH = 1.0 Hz

R

S

I

C=1.0mA

300

µA

100

µA

30

µA

BANDWIDTH = 1.0 Hz

NOISE FIGURE CONTOURS

(V

CE =

5.0 Vdc, T

A = 25°C)

20

10

7.0

5.0

3.0

2.0

10

20

50

100

200

500

1.0k

2.0k

5.0k

10k

10

20

50

100

200

500

1.0k

2.0k

5.0k

10k

100

50

20

10

5.0

2.0

1.0

0.5

0.2

0.1

1.0M

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

10

20

30

50

70

100

200

300

500 700 1.0K

10

20

30

50

70

100

200

300

500 700 1.0K

10

20

30

50

70

100

200

300

500 700 1.0K

10 dB

4.0dB

2.0dB

3.0 dB

1.0dB

2.0 dB

3.0dB

5.0dB

1.0dB

2.0dB

3.0 dB

5.0 dB

10 Hz to 15.7KHz

10

µA

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

50

6.0 dB

~

8.0dB

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

50

8.0 dB

10

µA

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