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STB31L01 データシート(PDF) 1 Page - SamHop Microelectronics Corp. |
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STB31L01 データシート(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a STB31L01 Symbol VDS VGS IDM A ID Units Parameter 100 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ 100V 26A 49 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-263 Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed a A Ver 1.1 www.samhop.com.tw Sep,20,2012 1 Details are subject to change without notice. TC=25°C W PD °C -55 to 175 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 2 °C/W Thermal Resistance, Junction-to-Case R JC TC=70°C A TC=70°C W 26 76 75 Gre rr P Pr P P o rr 21.8 52.5 62.5 °C/W Thermal Resistance, Junction-to-Ambient R JA STB S ER IE S TO-263(DD-P AK ) G G S S D D EAS Single Pulse Avalanche Energy c mJ 36 |
同様の部品番号 - STB31L01 |
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同様の説明 - STB31L01 |
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