STBP423S datasheet(2/7 Pages) SAMHOP

部品番号	STBP423S

部品情報	S uper high dense cell design for extremely low R DS (ON).

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メーカー	SAMHOP [SamHop Microelectronics Corp.]

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2

5

P-Channel ELECTRICAL CHARACTERISTICS

S T B / P 4 2 3 S

-40

VGS -10V, ID -24A

VGS -4.5V, ID -12A

VDS -10V, ID -10A

VDS =-20V, VGS = 0V

f =1.0MHZ

VDD = -24V

ID = -24 A

VGS = -10V

R GEN = 3.3 ohm

VDS =-24V, ID = -24A

VGS =-10V

=

VDS =-24V, ID =-24A,VGS =-10V

VDS =-24V, ID =-24A,VGS =-4.5V

5

E LE C TR IC AL C HAR AC TE R IS TIC S (TA 25 C unless otherwise noted)

=

Parameter

S ymbol

Condition

Min Typ Max Unit

OFF CHAR ACTE R IS TICS

Drain-S ource Breakdown Voltage

BVDSS

=

VGS 0V, ID 250uA

=

V

Zero Gate Voltage Drain Current

IDSS

VDS -32V, VGS 0V

=

-1

uA

Gate-Body Leakage

IGSS

VGS

20V,VDS 0V

=

nA

ON CHAR ACTE R IS TICS

b

Gate Threshold Voltage

VGS(th)

VDS VGS, ID = -250uA

=

-1.0

V

Drain-S ource On-S tate R esistance

R DS(ON)

C

100

m ohm

25

S

Forward Transconductance

FS

g

DYNAMIC CHAR ACTE R IS TICS

c

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

P

F

P

F

P

F

S WITCHING CHAR ACTE R IS TICS

c

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

ns

105

96

Fall Time

380

650

68

m ohm

Total Gate Charge

Gate-S ource Charge

Gate-Drain Charge

Qg

Qgs

Qgd

nC

94

25.2

9.5

48

10

-3.0

9.5

4210

230

-1.8

7.5

12.5

同様の部品番号 - STBP423S

メーカー	部品番号	データシート	部品情報
SamHop Microelectronics...	STBP432S	243Kb / 8P	Super high dense cell design for extremely low RDS(ON).
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同様の説明 - STBP423S

メーカー	部品番号	データシート	部品情報
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