MAXIMUM RATINGS: (TC=25°C)

2N3713

2N3714

SYMBOL

2N3715

2N3716

UNITS

Collector-Base Voltage

VCBO

80

100

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

10

A

Continuous Base Current

IB

4.0

A

Power Dissipation

PD

150

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JC

1.17

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICEV

VCE=Rated VCBO, VBE=1.5V

1.0

mA

ICEV

VCE=Rated VCEO, VBE=1.5V, TC=150°C

10

mA

IEBO

VEB=7.0V

5.0

mA

BVCEO

IC=200mA (2N3713, 2N3715)

60

V

BVCEO

IC=200mA (2N3714, 2N3716)

80

V

VCE(SAT)

IC=5.0A, IB=0.5A (2N3713, 2N3714)

1.0

V

VCE(SAT)

IC=5.0A, IB=0.5A (2N3715, 2N3716)

0.8

V

VBE(SAT)

IC=5.0A, IB=0.5A (2N3713, 2N3714)

2.0

V

VBE(SAT)

IC=5.0A, IB=0.5A (2N3715, 2N3716)

1.5

V

VBE(ON)

VCE=2.0V, IC=3.0A

1.5

V

hFE

VCE=2.0V, IC=1.0A (2N3713, 2N3714)

40

120

hFE

VCE=2.0V, IC=1.0A (2N3715, 2N3716)

50

150

hFE

VCE=2.0V, IC=3.0A (2N3713, 2N3714)

15

hFE

VCE=2.0V, IC=3.0A (2N3715, 2N3716)

30

fT

VCE=10V, IC=0.5A, f=1.0MHz

4.0

MHz

tr

IC=5.0A, IB1=IB2=0.5A

0.4

μs

ts

IC=5.0A, IB1=IB2=0.5A

0.3

μs

tf

IC=5.0A, IB1=IB2=0.5A

0.4

μs

2N3713

2N3715

2N3714

2N3716

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,

2N3715, and 2N3716 are silicon NPN power transistors

manufactured by the epitaxial-base process, mounted

in a hermetically sealed metal package designed for

medium speed switching and amplifier applications.

MARKING: FULL PART NUMBER

TO-3 CASE

R2 (18-June 2013)

www.centr a lsemi.com