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SMB1N-830N-02 データシート(PDF) 1 Page - Roithner LaserTechnik GmbH |
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SMB1N-830N-02 データシート(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 4 page www.roithner-laser.com 1 SMB1N-830N-02 v 1.0 17.03.2014 Description SMB1N-830N-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 830 nm and radiation of 340 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin. Maximum Ratings (T CASE=25°C) Parameter Symbol Values Min. Max. Unit Power Dissipation PD 1800 mW Forward Current IF 800 mA Pulse Forward Current * 1 IFP 2000 mA Reverse Voltage VF 5 V Thermal Resistance RTHJA 10 K/W Junction Temperature TJ 120 °C Operating Temperature TCASE - 40 + 100 °C Storage Temperature TSTG - 40 + 100 °C Lead Solder Temperature * 2 TSLD + 250 °C * 1 duty=1%, pulse width = 10 µs * 2 must be completed within 5 seconds Electro-Optical Characteristics (T CASE=25°C) * 1 measured by S3584-08 * 2 measured by CIE127-2007 Condition B Parameter Symbol Conditions Values Min. Typ. Max. Unit Peak Wavelength λP IF=800mA 820 830 840 nm Half Width ∆λ IF=800mA 40 nm Forward Voltage VF IF=800mA 1.8 2.2 V VFP IFP=2A 2.3 Radiated Power * 1 PO IF=800mA 340 mW IFP=2A 820 Radiant Intensity * 2 IE IF=800mA 610 mW/sr IFP=2A 1480 Viewing Angle φ IF=100mA 18 deg. Rise Time tR IF=800mA 25 ns Fall Time tF IF=800mA 30 ns |
同様の部品番号 - SMB1N-830N-02 |
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同様の説明 - SMB1N-830N-02 |
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