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SMB1N-830N-02 データシート(PDF) 1 Page - Roithner LaserTechnik GmbH

部品番号 SMB1N-830N-02
部品情報  infrared high power led
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メーカー  ROITHNER [Roithner LaserTechnik GmbH]
ホームページ  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

SMB1N-830N-02 データシート(HTML) 1 Page - Roithner LaserTechnik GmbH

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SMB1N-830N-02
v 1.0 17.03.2014
Description
SMB1N-830N-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 830 nm
and radiation of 340 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone resin.
Maximum Ratings (T
CASE=25°C)
Parameter
Symbol
Values
Min.
Max.
Unit
Power Dissipation
PD
1800
mW
Forward Current
IF
800
mA
Pulse Forward Current *
1
IFP
2000
mA
Reverse Voltage
VF
5
V
Thermal Resistance
RTHJA
10
K/W
Junction Temperature
TJ
120
°C
Operating Temperature
TCASE
- 40
+ 100
°C
Storage Temperature
TSTG
- 40
+ 100
°C
Lead Solder Temperature *
2
TSLD
+ 250
°C
*
1 duty=1%, pulse width = 10 µs
*
2 must be completed within 5 seconds
Electro-Optical Characteristics (T
CASE=25°C)
*
1 measured by S3584-08
*
2 measured by CIE127-2007 Condition B
Parameter
Symbol Conditions
Values
Min.
Typ.
Max.
Unit
Peak Wavelength
λP
IF=800mA
820
830
840
nm
Half Width
∆λ
IF=800mA
40
nm
Forward Voltage
VF
IF=800mA
1.8
2.2
V
VFP
IFP=2A
2.3
Radiated Power *
1
PO
IF=800mA
340
mW
IFP=2A
820
Radiant Intensity *
2
IE
IF=800mA
610
mW/sr
IFP=2A
1480
Viewing Angle
φ
IF=100mA
18
deg.
Rise Time
tR
IF=800mA
25
ns
Fall Time
tF
IF=800mA
30
ns


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