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KF3N40D データシート(PDF) 2 Page - KEC(Korea Electronics) |
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KF3N40D データシート(HTML) 2 Page - KEC(Korea Electronics) |
2 / 6 page 2010. 8. 23 2/6 KF3N40D/I Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250μ A, VGS=0V 400 - - V Breakdown Voltage Temperature Coefficient ΔBV DSS/ΔTj ID=250μ A, Referenced to 25 ℃ - 0.4 - V/ ℃ Drain Cut-off Current IDSS VDS=400V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.1A - 2.8 3.4 Ω Dynamic Total Gate Charge Qg VDS=320V, ID=2.2A VGS=10V (Note4,5) - 4.4 5.8 nC Gate-Source Charge Qgs - 1.0 - Gate-Drain Charge Qgd - 2.0 - Turn-on Delay time td(on) VDD=200V, ID=2.2A RG=25Ω (Note4,5) VGS=10V - 10 - ns Turn-on Rise time tr - 11 - Turn-off Delay time td(off) - 20 - Turn-off Fall time tf - 17 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 163 211 pF Output Capacitance Coss - 26 - Reverse Transfer Capacitance Crss - 2.5 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 2 A Pulsed Source Current ISP - - 8 Diode Forward Voltage VSD IS=2.2A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=2.2A, VGS=0V, dIs/dt=100A/ μs - 240 - ns Reverse Recovery Charge Qrr - 0.65 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L = 19mH, IS=2.2A, VDD=50V, RG = 25Ω, Starting Tj = 25℃. Note 3) IS ≤2A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj = 25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 KF3N40 001 D KF3N40 001 I 1 2 1 2 Marking |
同様の部品番号 - KF3N40D_15 |
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同様の説明 - KF3N40D_15 |
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