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IRF40H210 データシート(PDF) 2 Page - International Rectifier

部品番号 IRF40H210
部品情報  Brushed Motor drive applications
Download  11 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF40H210 データシート(HTML) 2 Page - International Rectifier

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IRF40H210
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
April 1, 2015
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V
201
A
ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V
127
ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V(Wire Bond Limited)
100
IDM
Pulsed Drain Current 
400*
PD @TC = 25°C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150  
°C  
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
42
––– mV/°C Reference to 25°C, ID = 1mA 
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.4
1.7
VGS = 10V, ID = 100A 
–––
2.3
–––
VGS = 6.0V, ID = 50A 
VGS(th)
Gate Threshold Voltage
2.2
–––
3.7
V
VDS = VGS, ID = 150µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 40 V, VGS = 0V
–––
–––
150
VDS = 40V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
2.6
–––

m

Notes:

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 100A
by source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.030mH, RG = 50, IAS = 100A, VGS =10V.

ISD  100A, di/dt  1117A/µs, VDD  V(BR)DSS, TJ 150°C.

Pulse width
 400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 27A, VGS =10V.
* Pulse drain current is limited by source bonding technology.
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
149
mJ
EAS (Thermally limited)
Single Pulse Avalanche Energy 
370
IAR
Avalanche Current 
See Fig 15, 16, 23a, 23b
A
EAR
Repetitive Avalanche Energy 
mJ
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC (Bottom)
Junction-to-Case 
–––
1.0
RJC (Top)
Junction-to-Case 
–––
18
°C/W
RJA
Junction-to-Ambient 
–––
33
 
RJA (<10s)
Junction-to-Ambient 
–––
20
 


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