IRF3610SPBF_15 datasheet(2/9 Pages) IRF

部品番号	IRF3610SPBF

部品情報	High Efficiency Synchronous Rectification in SMPS

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IRF3610SPbF

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March 26, 2014

2

Notes:

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.24mH

RG = 50Ω, IAS = 62A, VGS =10V. Part not recommended for use

above this value.

ISD ≤ 62A, di/dt ≤ 1935A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging

time as Coss while VDS is rising from 0 to 80% VDSS.

S

D

G

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-

mended footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

RθJC value shown is at time zero.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

V

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.10

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

9.3

11.6

m

Ω

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

V

gfs

Forward Transconductance

110

–––

S

RG

Internal Gate Resistance

–––

2.2

–––

Ω

IDSS

Drain-to-Source Leakage Current

–––

20

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

200

nA

Gate-to-Source Reverse Leakage

–––

-200

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Qg

Total Gate Charge

–––

100

150

nC

Qgs

Gate-to-Source Charge

–––

23

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

42

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

58

–––

td(on)

Turn-On Delay Time

–––

15

–––

ns

tr

Rise Time

–––

55

–––

td(off)

Turn-Off Delay Time

–––

77

–––

tf

Fall Time

–––

43

–––

Ciss

Input Capacitance

–––

5380

–––

pF

Coss

Output Capacitance

–––

690

–––

Crss

Reverse Transfer Capacitance

–––

100

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related) –––

560

–––

Coss eff. (TR) Effective Output Capacitance (Time Related)

–––

750

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current

–––

103

A

(Body Diode)

ISM

Pulsed Source Current

–––

410

A

(Body Diode)Ãd

VSD

Diode Forward Voltage

–––

1.3

V

trr

Reverse Recovery Time

–––

110

–––

ns

TJ = 25°C

VR = 85V,

–––

120

–––

TJ = 125°C

IF = 62A

Qrr

Reverse Recovery Charge

–––

570

–––

nC TJ = 25°C

di/dt = 100A/µs f

–––

710

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

-9.5

–––

A

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VDS = 25V, ID = 62A

ID = 62A

RG = 2.7Ω

VGS = 10V f

VDD = 65V

ID = 62A, VDS =0V, VGS = 10V

Conditions

ID = 62A

VGS = 20V

VGS = -20V

TJ = 25°C, IS = 62A, VGS = 0V f

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1.0mA

VGS = 10V, ID = 62A f

VDS = VGS, ID = 250µA

VDS = 100V, VGS = 0V

VDS = 100V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS =50V

Conditions

VGS = 10V f

VGS = 0V

VDS = 25V

ƒ = 1.0 MHz, See Fig. 5

VGS = 0V, VDS = 0V to 80V h, See Fig. 11

VGS = 0V, VDS = 0V to 80V g

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