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IRF6609PBF データシート(PDF) 1 Page - International Rectifier |
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IRF6609PBF データシート(HTML) 1 Page - International Rectifier |
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1 / 11 page  www.irf.com 1 7/3/06 Notes through are on page 10 Description The IRF6609PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compat- ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6609PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6609PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. DirectFET ISOMETRIC MT SQ SX ST MQ MX MT Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) PD - 97091A VDSS RDS(on) max Qg 20V 2.0m Ω@VGS = 10V 46nC 2.6m Ω@VGS = 4.5V IRF6609PbF IRF6609TRPbF l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V k ID @ TA = 25°C Continuous Drain Current, VGS @ 10V Ãh A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V h IDM Pulsed Drain Current e PD @TC = 25°C Power Dissipation k PD @TA = 25°C Power Dissipation h W PD @TA = 70°C Power Dissipation h Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJA Junction-to-Ambient hl ––– 45 RθJA Junction-to-Ambient il 12.5 ––– RθJA Junction-to-Ambient jl 20 ––– °C/W RθJC Junction-to-Case kl ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Max. 31 25 250 ±20 20 150 -40 to + 150 89 0.022 1.8 2.8 |
同様の部品番号 - IRF6609PBF_15 |
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同様の説明 - IRF6609PBF_15 |
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