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IRF6715MPBF データシート(PDF) 2 Page - International Rectifier

部品番号 IRF6715MPBF
部品情報  Dual Sided Cooling Compatible
Download  9 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF6715MPBF データシート(HTML) 2 Page - International Rectifier

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IRF6715MPbF
2
www.irf.com
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
17
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.3
1.6
m
–––
2.1
2.7
VGS(th)
Gate Threshold Voltage
1.4
1.9
2.4
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-6.2
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
135
–––
–––
S
Qg
Total Gate Charge
–––
40
59
Qgs1
Pre-Vth Gate-to-Source Charge
–––
12
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
5.3
–––
nC
Qgd
Gate-to-Drain Charge
–––
12
–––
Qgodr
Gate Charge Overdrive
–––
11
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
17
–––
Qoss
Output Charge
–––
26
–––
nC
RG
Gate Resistance
–––
1.1
2.0
td(on)
Turn-On Delay Time
–––
20
–––
tr
Rise Time
–––
31
–––
ns
td(off)
Turn-Off Delay Time
–––
16
–––
tf
Fall Time
–––
12
–––
Ciss
Input Capacitance
–––
5340
–––
Coss
Output Capacitance
–––
1280
–––
pF
Crss
Reverse Transfer Capacitance
–––
600
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Ãg
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
28
42
ns
Qrr
Reverse Recovery Charge
–––
37
56
nC
di/dt = 200A/µs i
TJ = 25°C, IS = 27A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
VGS = 4.5V, ID = 27A i
TJ = 25°C, IF = 27A
VGS = 4.5V
ID = 27A
VGS = 0V
VDS = 13V
ID = 27A
VDD = 13V, VGS = 4.5VÃi
VGS = 20V
VGS = -20V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 34A i
VDS = 20V, VGS = 0V
VDS = 13V
VDS = 20V, VGS = 0V, TJ = 125°C
VDS = 13V, ID = 27A
Conditions
See Fig. 17
ƒ = 1.0MHz
VDS = 16V, VGS = 0V
VDS = VGS, ID = 100µA
270
–––
–––
98
A
–––
–––
MOSFET symbol
RG = 1.8Ω


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