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IRF6718L2PBF データシート(PDF) 8 Page - International Rectifier

部品番号 IRF6718L2PBF
部品情報  RoHS Compliant Containing No Lead and Bromide
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF6718L2PBF データシート(HTML) 8 Page - International Rectifier

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IRF6718L2TR/TR1PbF
8
www.irf.com
Fig 19.
Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
D.U.T

DirectFET® Board Footprint, L6 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
SSS
S
S
S
G


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