IRF7413PbF

Top View

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

S

S

A

l GenerationVTechnology

l Ultra Low On-Resistance

l N-ChannelMosfet

l SurfaceMount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

l Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques. Power dissipation

of greater than 0.8W is possible in a typical PCB mount

application.

02/11/08

SO-8

Symbol

Parameter

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

A

Pulsed Drain Current

c

Power Dissipation

W

Linear Derating Factor

mW/°C

Single Pulse Avalanche Energency

d

mJ

dv/dt

Peak Diode Recovery dv/dt

e

V/ns

Junction and Storage Temperature Range

°C

Symbol

Parameter

TypMax

Units

Junction-to-Drain Lead

–––

20

Junction-to-Ambient

g

–––

50

V

2.5

Max

30

± 20

13

Thermal Resistance Ratings

Absolute Maximum Ratings

°C/W

9.2

5.0

0.02

260

-55 to +150

58

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1

PD - 95017C