IRF7416PbF

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Generation V Technology

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Ultra Low On-Resistance

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P-Channel Mosfet

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Surface Mount

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Available in Tape & Reel

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Dynamic dv/dt Rating

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Fast Switching

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Lead-Free

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques. Power dissipation

of greater than 0.8W is possible in a typical PCB mount

application.

06/29/11

www.irf.com

1

Top View

8

1

2

3

4

5

6

7

D

D

D

G

S

A

D

S

S

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

-10

-7.1

Pulsed Drain Current

c

-45

Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

d

370

mJ

dv/dt

Peak Diode Recovery dv/dt

e

-5.0

V/ns

Operating Junction and

Storage Temperature Range

Thermal Resistance

Parameter

Max.

Units

Junction-to-Ambient

g

50

°C/W

W

A

°C

-55 to + 150

PD - 95137A