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IRF7807PBF データシート(PDF) 2 Page - International Rectifier

部品番号 IRF7807PBF
部品情報  N Channel Application Specific MOSFETs
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF7807PBF データシート(HTML) 2 Page - International Rectifier

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IRF7807/APbF
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Diode Forward
V
SD
1.2
1.2
V
I
S = 7A‚, VGS = 0V
Voltage*
Reverse Recovery
Q
rr
80
80
nC
di/dt = 700A/µs
Charge
„
V
DS = 16V, VGS = 0V, IS = 7A
Reverse Recovery
Q
rr(s)
50
50
Charge (with Parallel
Schotkky)
„
Parameter
Min Typ Max
Min
Typ Max Units
Conditions
Drain-to-Source
V
(BR)DSS
30
30
V
V
GS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source
R
DS(on)
17
25
17
25
m
V
GS = 4.5V, ID = 7A‚
on Resistance*
Gate Threshold Voltage*
V
GS(th)
1.0
1.0
V
V
DS = VGS, ID = 250µA
Drain-Source Leakage
I
DSS
30
30
µA
V
DS = 24V, VGS = 0
150
150
V
DS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
I
GSS
±100
±100
nA
V
GS = ±12V
Current*
Total Gate Charge*
Q
g
12
17
12
17
V
GS = 5V, ID = 7A
Pre-Vth
Q
gs1
2.1
2.1
V
DS = 16V, ID = 7A
Gate-Source Charge
Post-Vth
Q
gs2
0.76
0.76
nC
Gate-Source Charge
Gate to Drain Charge
Q
gd
2.9
2.9
Switch Charge*
Q
SW
3.66
5.2
3.66
(Q
gs2 + Qgd)
Output Charge*
Q
oss
14
16.8
14
16.8
V
DS = 16V, VGS = 0
Gate Resistance
R
g
1.2
1.2
Turn-on Delay Time
t
d(on)
12
12
V
DD = 16V
Rise Time
t
r
17
17
ns
I
D = 7A
Turn-off Delay Time
t
d (off)
25
25
R
g = 2Ω
Fall Time
t
f
66
V
GS = 4.5V
Resistive Load
Electrical Characteristics
Source-Drain Rating & Characteristics
Notes:

Repetitive rating; pulse width limited by max. junction temperature.
‚
Pulse width
≤ 300 µs; duty cycle ≤ 2%.
ƒ
When mounted on 1 inch square copper board, t < 10 sec.
„
Typ = measured - Q
oss
*
Devices are 100% tested to these parameters.
IRF7807
IRF7807A
Current*
di/dt = 700A/µs
(with 10BQ040)
V
DS = 16V, VGS = 0V, IS = 7A


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