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IRF7807VPBF-1 データシート(PDF) 2 Page - International Rectifier |
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IRF7807VPBF-1 データシート(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7807VTRPbF-1 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board Typ = measured - Q oss
Typical values of RDS(on) measured at V GS = 4.5V, QG, QSW and QOSS measured at V GS = 5.0V, IF = 7.0A. Rθ is measured at TJ approximately 90°C * Device are 100% tested to these parameters. Electrical Characteristics Parameter Symbol Min Typ Max Units Drain-Source Breakdown Voltage BVDSS 30 ––– ––– V Static Drain-Source On-Resistance RDS(on) ––– 17 25 m Ω Gate Threshold Voltage VGS(th) 1.0 ––– 3.0 V ––– ––– 100 ––– ––– 20 ––– ––– 100 Gate-Source Leakage Current* IGSS ––– ––– ±100 nA Total Gate Charge* QG ––– 9.5 14 Pre-Vth Gate-Source Charge QGS1 ––– 2.3 ––– Post-Vth Gate-Source Charge QGS2 ––– 1.0 ––– Gate-to-Drain Charge QGD ––– 2.4 ––– Switch Charge (Qgs2 + Qgd)QSW ––– 3.4 5.2 Output Charge* QOSS ––– 12 16.8 VDS = 16V, VGS = 0 Gate Resistance RG 0.9 ––– 2.8 Ω Turn-On Delay Time td(on) ––– 6.3 ––– Rise Time tr ––– 1.2 ––– Turn-Off Delay Time td(off) ––– 11 ––– Fall Time tf ––– 2.2 ––– Source-Drain Ratings and Characteristics Parameter Symbol Min Typ Max Units Diode Forward Voltage* VSD ––– ––– 1.2 V Reverse Recovery Charge (with Parallel Schottsky) f 64 ––– IS = 7.0A d ,VGS = 0V ––– Qrr Conditions VGS = 0V, ID = 250μA VGS = 4.5V, ID = 7.0A d VDS = VGS, ID = 250μA VDS = 30V, VGS = 0 VGS = ± 20V IDSS Drain-Source Leakage Current VDS = 16V VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, TJ = 100°C VGS = 5V, ID = 7.0A μA nC ns Conditions VGS = 5V, RG = 2 Ω VDD = 16V ID = 7A Resistive Load ––– nC Reverse Recovery Charge f di/dt = 700A/μs , (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A di/dt = 700A/μs VDS = 16V, VGS = 0V, IS = 7.0A Qrr(s) ––– 41 |
同様の部品番号 - IRF7807VPBF-1_15 |
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同様の説明 - IRF7807VPBF-1_15 |
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