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IRF7815PBF データシート(PDF) 2 Page - International Rectifier |
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IRF7815PBF データシート(HTML) 2 Page - International Rectifier |
2 / 9 page IRF7815PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 34 43 m Ω VGS(th) Gate Threshold Voltage 3.0 4.0 5.0 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -12.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 8.2 ––– ––– S Qg Total Gate Charge ––– 25 38 Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.3 ––– Qgs Gate-to-Source Charge ––– 7.8 ––– Qgd Gate-to-Drain Charge ––– 7.4 ––– See Figs. 6, 16a & 16b Qgodr Gate Charge Overdrive ––– 9.8 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8..7 ––– Qoss Output Charge ––– 10 ––– nC RG Gate Resistance ––– 1.02 ––– Ω td(on) Turn-On Delay Time ––– 8.4 ––– tr Rise Time ––– 3.2 ––– td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 8.3 ––– Ciss Input Capacitance ––– 1647 ––– Coss Output Capacitance ––– 129 ––– Crss Reverse Transfer Capacitance ––– 30 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 41 62 ns Qrr Reverse Recovery Charge ––– 213 320 nC ID = 3.1A VGS = 0V VDS = 75V pF Typ. ––– RG = 1.8Ω ––– VDS = 150V, VGS = 0V, TJ = 125°C VDS = VGS, ID = 100µA VDS = 150V, VGS = 0V VGS = 10V VDS = 75V VGS = 20V VGS = -20V VDS = 50V, ID = 3.1A TJ = 25°C, IF = 3.1A, VDD = 75V di/dt = 300A/µs e TJ = 25°C, IS = 3.1A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol VDS = 16V, VGS = 0V VDD = 75V, VGS = 10V e ID = 3.1A Conditions See Figs. 15a & 15b Max. 529 3.1 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 3.1A e µA nA nC ns A 2.3 ––– ––– ––– ––– 41 |
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