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IRF8301MPBF データシート(PDF) 8 Page - International Rectifier |
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IRF8301MPBF データシート(HTML) 8 Page - International Rectifier |
8 / 10 page IRF8301MTRPbF www.irf.com © 2013 International Rectifier September 6, 2013 8 Fig 19. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period *** VGS = 5V for Logic Level Devices *** + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T ** * * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel DirectFET Board Footprint, MT Outline (Medium Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE G D DD D S S Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ |
同様の部品番号 - IRF8301MPBF |
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同様の説明 - IRF8301MPBF |
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