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IRF9317PBF データシート(PDF) 2 Page - International Rectifier

部品番号 IRF9317PBF
部品情報  Industry-Standard SO8 Package
Download  8 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF9317PBF データシート(HTML) 2 Page - International Rectifier

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IRF9317PbF
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting T
J = 25°C, L = 4.3mH, RG = 25Ω, IAS = -13A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.022
–––
V/°C
RDS(on)
–––
5.4
6.6
–––
8.3
10.2
VGS(th)
Gate Threshold Voltage
-1.3
-1.8
-2.4
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-5.7
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-150
IGSS
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
gfs
Forward Transconductance
36
–––
–––
S
Qg
Total Gate Charge
h
–––31–––
nC
VDS = -15V, VGS = -4.5V, ID = - 13A
Qg
Total Gate Charge
h
–––
61
92
Qgs
Gate-to-Source Charge
h
–––
9
–––
Qgd
Gate-to-Drain Charge
h
–––14–––
RG
Gate Resistance
h
–––14–––
Ω
td(on)
Turn-On Delay Time
–––
19
–––
tr
Rise Time
–––64–––
td(off)
Turn-Off Delay Time
–––
160
–––
tf
Fall Time
–––
120
–––
Ciss
Input Capacitance
–––
2820
–––
Coss
Output Capacitance
–––
640
–––
Crss
Reverse Transfer Capacitance
–––
370
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
-1.2
V
trr
Reverse Recovery Time
–––
33
50
ns
Qrr
Reverse Recovery Charge
–––
30
45
nC
Thermal Resistance
Parameter
Units
RθJL
Junction-to-Drain Lead
g
RθJA
Junction-to-Ambient
f
Conditions
See Figs. 20a &20b
Max.
330
-13
ƒ = 1.0MHz
VGS = 0V
VDS = -15V
VDS = -24V, VGS = 0V
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -16A
e
VDS = VGS, ID = -50µA
VGS = -4.5V, ID = -13A
e
m
Ω
µA
TJ = 25°C, IF = -2.5A, VDD = -24V
di/dt = 100A/µs
e
TJ = 25°C, IS = -2.5A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
ID = -13A
RG = 6.8
Ω
VDS = -10V, ID = -13A
VDS = -24V, VGS = 0V, TJ = 125°C
VDD = -15V, VGS = -4.5V
e
ID = -1.0A
VDS = -15V
VGS = -20V
VGS = 20V
VGS = -10V
ns
pF
–––
Typ.
–––
Static Drain-to-Source On-Resistance
A
–––
–––
–––
–––
-2.5
-130
nA
nC
°C/W
Max.
20
50
Typ.
–––
–––
G
D
S


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