2N3055AG datasheet(1/6 Pages) ONSEMI

部品番号	2N3055AG

部品情報	Complementary Silicon High-Power Transistors

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September, 2013 − Rev. 7

1

Publication Order Number:

2N3055A/D

2N3055AG (NPN),

MJ15015G (NPN),

MJ15016G (PNP)

Complementary Silicon

High-Power Transistors

These PowerBase complementary transistors are designed for high

power audio, stepping motor and other linear applications. These

devices can also be used in power switching circuits such as relay or

solenoid drivers, dc−to−dc converters, inverters, or for inductive loads

requiring higher safe operating area than the 2N3055.

Features

• High Current−Gain − Bandwidth

• Safe Operating Area

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

2N3055AG

MJ15015G, MJ15016G

VCEO

60

120

Vdc

Collector−Base Voltage

2N3055AG

MJ15015G, MJ15016G

VCBO

100

200

Vdc

Collector−Emitter Voltage Base

Reversed Biased

2N3055AG

MJ15015G, MJ15016G

VCEV

100

200

Vdc

Emitter−Base Voltage

VEBO

7.0

Vdc

Collector Current − Continuous

IC

15

Adc

Base Current

IB

7.0

Adc

Total Device Dissipation

@ TC = 25_C

2N3055AG

MJ15015G, MJ15016G

Derate above 25

_C

2N3055AG

MJ15015G, MJ15016G

PD

115

180

0.65

1.03

W

W/

_C

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to +200

_C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data. (2N3055A)

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

1.52

0.98

_C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

15 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60, 120 VOLTS − 115, 180 WATTS

http://onsemi.com

MARKING DIAGRAMS

2N3055AG

AYWW

MEX

TO−204 (TO−3)

CASE 1−07

STYLE 1

2N3055A = Device Code

MJ1501x = Device Code

x = 5 or 6

G

= Pb−Free Package

A

= Assembly Location

Y

= Year

WW

= Work Week

MEX

= Country of Origin

MJ1501xG

AYWW

MEX

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

PNP

BASE

1

EMITTER 2

CASE 3

BASE

1

EMITTER 2

CASE 3

2

CASE

1

NPN

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