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IRFB4229PBF データシート(PDF) 4 Page - International Rectifier

部品番号 IRFB4229PBF
部品情報  Advanced Process Technology
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRFB4229PBF データシート(HTML) 4 Page - International Rectifier

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IRFB4229PbF
4
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Fig 11. Maximum Drain Current vs. Case Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Safe Operating Area
Fig 7. Typical EPULSE vs.Temperature
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
7000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
20
40
60
80
100
120
QG Total Gate Charge (nC)
0
4
8
12
16
20
VDS= 160V
VDS= 100V
VDS= 40V
ID= 26A
25
50
75
100
125
150
175
TJ, Junction Temperature (°C)
0
10
20
30
40
50
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 175°C
Single Pulse
1µsec
10µsec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
25
50
75
100
125
150
Temperature (°C)
0
400
800
1200
1600
2000
L = 220nH
C= 0.3µF
C= 0.2µF
C= 0.1µF


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