KDS123S_15 datasheet(1/3 Pages) KEC

部品番号	KDS123S

部品情報	SILICON EPITAXIAL PLANAR DIODE

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メーカー	KEC [KEC(Korea Electronics)]

ホームページ	http://www.keccorp.com

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2012. 1. 9

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SEMICONDUCTOR

TECHNICAL DATA

KDS123S

SILICON EPITAXIAL PLANAR DIODE

Revision No : 1

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

・Low Forward Voltage

・Fast Reverse Recovery Time

・Small Total Capacitance

・Ultra- Small Surface Mount Package

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

1. CATHODE 2

2. ANODE 1

3. ANODE 2/CATHODE 1

2

D1

D2

1

3

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Maximum (Peak) Reverse Voltage

VRM

80

V

Reverse Voltage

VR

80

V

Maximum (Peak) Forward Current

IFM

300*

mA

Average Forward Current

IO

100*

mA

Surge Current (10mS)

IFSM

2*

A

Power Dissipation

PD

150

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

VF

IF=100mA

-

1.2

V

Reverse Current

IR

VR=80V

-

0.1

μA

Total Capacitance

CT

VR=6V, f=1MHz

-

3.5

pF

Type Name

Marking

U S

Lot. No.

* Unit Rating. Total Rating=Unit Rating

×0.7

同様の部品番号 - KDS123S_15

メーカー	部品番号	データシート	部品情報
KEC(Korea Electronics)	KDS123S	441Kb / 3P	SILICON EPITAXIAL PLANAR DIODE

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