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2SD1802S-E データシート(PDF) 2 Page - ON Semiconductor

部品番号 2SD1802S-E
部品情報  Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SD1802S-E データシート(HTML) 2 Page - ON Semiconductor

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2SB1202/2SD1802
No.2113-2/7
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Dissipation
PC
1W
Tc=25°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
μA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)100mA
100*
560*
hFE2VCE=(--)2V, IC=(--)3A
35
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
150
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(39)25
pF
Collector to Emitter Saturation Voltage
VCE(sat)
IC=(--)2A, IB=(--)100mA
(--0.35)0.19
(--0.7)0.5
mV
Base to Emitter Saturation Voltage
VBE(sat)
VCE=(--)2V, IC=(--)100mA
(--)0.94
(--)1.2
V
Collector to Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)60
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
70
ns
Storage Time
tstg
(450)650
ns
Fall Time
tf
35
ns
* : The 2SB1202/2SD1802 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SB1202S-E
TP
500pcs./bag
Pb Free
2SB1202T-E
TP
500pcs./bag
2SD1802S-E
TP
500pcs./bag
2SD1802T-E
TP
500pcs./bag
2SB1202S-TL-E
TP-FA
700pcs./reel
2SB1202T-TL-E
TP-FA
700pcs./reel
2SD1802S-TL-E
TP-FA
700pcs./reel
2SD1802T-TL-E
TP-FA
700pcs./reel
VR
RB
VCC=25V
VBE= --5V
+
+
50Ω
INPUT
RL
25Ω
OUTPUT
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.


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