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IRFP4768PBF データシート(PDF) 2 Page - International Rectifier

部品番号 IRFP4768PBF
部品情報  High Efficiency Synchronous Rectification in SMPS
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRFP4768PBF データシート(HTML) 2 Page - International Rectifier

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IRFP4768PbF
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.50mH
RG = 25Ω, IAS = 56A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD ≤ 56A, di/dt ≤ 950A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
‡ Rθ is measured at TJ approximately 90°C.
ˆ RθJC value shown is at time zero.
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
250
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.20
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
14.5
17.5
m
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
RG
Internal Gate Resistance
–––
0.71
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
100
–––
–––
S
Qg
Total Gate Charge
–––
180
270
nC
Qgs
Gate-to-Source Charge
–––
52
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
72
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
108
–––
td(on)
Turn-On Delay Time
–––
36
–––
ns
tr
Rise Time
–––
160
–––
td(off)
Turn-Off Delay Time
–––
57
–––
tf
Fall Time
–––
110
–––
Ciss
Input Capacitance
––– 10880 –––
pF
Coss
Output Capacitance
–––
700
–––
Crss
Reverse Transfer Capacitance
–––
210
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related) h ––– 510 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)g
–––
830
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
93
A
(Body Diode)
ISM
Pulsed Source Current
–––
–––
370
A
(Body Diode)
c
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
180
–––
ns
TJ = 25°C
VR = 200V,
–––
200
–––
TJ = 125°C
IF = 56A
Qrr
Reverse Recovery Charge
–––
1480
–––
nC TJ = 25°C
di/dt = 100A/µs
f
–––
2260
–––
TJ = 125°C
IRRM
Reverse Recovery Current
–––
16
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 56A
ID = 56A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS =125V
Conditions
VGS = 10V
f
VGS = 0V
VDS = 50V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 200V h, See Fig. 11
VGS = 0V, VDS = 0V to 200V
g
TJ = 25°C, IS = 56A, VGS = 0V
f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
c
VGS = 10V, ID = 56A
f
VDS = VGS, ID = 250µA
VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V, TJ = 125°C
ID = 56A
RG = 1.0
VGS = 10V
f
VDD = 163V
ID = 56A, VDS =0V, VGS = 10V


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