データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

SMUN5211T1G データシート(PDF) 4 Page - ON Semiconductor

部品番号 SMUN5211T1G
部品情報  Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SMUN5211T1G データシート(HTML) 4 Page - ON Semiconductor

  SMUN5211T1G Datasheet HTML 1Page - ON Semiconductor SMUN5211T1G Datasheet HTML 2Page - ON Semiconductor SMUN5211T1G Datasheet HTML 3Page - ON Semiconductor SMUN5211T1G Datasheet HTML 4Page - ON Semiconductor SMUN5211T1G Datasheet HTML 5Page - ON Semiconductor SMUN5211T1G Datasheet HTML 6Page - ON Semiconductor SMUN5211T1G Datasheet HTML 7Page - ON Semiconductor SMUN5211T1G Datasheet HTML 8Page - ON Semiconductor SMUN5211T1G Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 12 page
background image
MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3
http://onsemi.com
4
Table 2. THERMAL CHARACTERISTICS
Characteristic
Unit
Max
Symbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBC114EF3)
Total Device Dissipation
TA = 25°C
(Note 3)
(Note 4)
Derate above 25°C
(Note 3)
(Note 4)
PD
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance,
(Note 3)
Junction to Ambient
(Note 4)
RqJA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
RqJL
193
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
100
nAdc
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
0.5
mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
35
60
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Vdc
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
1.2
0.8
Vdc
Input Voltage (on)
(VCE = 0.3 V, IC = 10 mA)
Vi(on)
2.5
1.8
Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Vdc
Input Resistor
R1
7.0
10
13
kW
Resistor Ratio
R1/R2
0.8
1.0
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.


同様の部品番号 - SMUN5211T1G

メーカー部品番号データシート部品情報
logo
ON Semiconductor
SMUN5211T1G ONSEMI-SMUN5211T1G Datasheet
140Kb / 12P
   Digital Transistors (BRT) R1 = 10 k, R2 = 10 k
August, 2012 ??Rev. 4
SMUN5211T1G ONSEMI-SMUN5211T1G Datasheet
140Kb / 12P
   Digital Transistors (BRT)
October, 2016 ??Rev. 7
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com