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SMUN5211T1G データシート(PDF) 4 Page - ON Semiconductor |
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SMUN5211T1G データシート(HTML) 4 Page - ON Semiconductor |
4 / 12 page MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 http://onsemi.com 4 Table 2. THERMAL CHARACTERISTICS Characteristic Unit Max Symbol THERMAL CHARACTERISTICS (SOT−1123) (NSBC114EF3) Total Device Dissipation TA = 25°C (Note 3) (Note 4) Derate above 25°C (Note 3) (Note 4) PD 254 297 2.0 2.4 mW mW/°C Thermal Resistance, (Note 3) Junction to Ambient (Note 4) RqJA 493 421 °C/W Thermal Resistance, Junction to Lead (Note 3) RqJL 193 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 4. FR−4 @ 500 mm2, 1 oz. copper traces, still air. Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.5 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 5) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS DC Current Gain (Note 5) (IC = 5.0 mA, VCE = 10 V) hFE 35 60 − Collector−Emitter Saturation Voltage (Note 5) (IC = 10 mA, IB = 0.3 mA) VCE(sat) − − 0.25 Vdc Input Voltage (off) (VCE = 5.0 V, IC = 100 mA) Vi(off) − 1.2 0.8 Vdc Input Voltage (on) (VCE = 0.3 V, IC = 10 mA) Vi(on) 2.5 1.8 − Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 7.0 10 13 kW Resistor Ratio R1/R2 0.8 1.0 1.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. |
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