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2PB1424_15 データシート(PDF) 1 Page - NXP Semiconductors |
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2PB1424_15 データシート(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD2150. 1.2 Features I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I DC-to-DC conversion I MOSFET gate driving I Motor control I Charging circuits I Power switches (e.g. motors, fans) I Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. 2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 — 15 January 2007 Product data sheet Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −20 V IC collector current - - −3A ICM peak collector current single pulse; tp ≤ 1ms -- −5A VCEsat collector-emitter saturation voltage IC = −2A; IB = −0.1 A [1] - −0.2 −0.5 V |
同様の部品番号 - 2PB1424_15_15 |
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同様の説明 - 2PB1424_15_15 |
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